IRFP26N60L, N-MOSFET, 600V, 26A, TO247-3, VISHAY

    SEAP
    ID
    DA11879287
    Data
    10 Mai 2017
    Valoare
    66,39 RON
    Stare
    Oferta acceptata
    Autoritatea contractantaLocalitate
    Bucuresti, Bucuresti
    FurnizorTipul contractului
    -
    Cod CPVDescriere:
    FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 26A (Tc) Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 5020pF @ 25V FET Feature - Power Dissipation (Max) 470W (Tc) Rds On (Max) @ Id, Vgs 250 mOhm @ 16A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3
    Achizitii
    66,39 RON
    Cantitate: 4
    Unitate masura: buc
    IRFP26N60L, N-MOSFET, 600V, 26A, TO247-3, VISHAY
    FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 26A (Tc) Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 5020pF @ 25V FET Feature - Power Dissipation (Max) 470W (Tc) Rds On (Max) @ Id, Vgs 250 mOhm @ 16A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3