GaAs Wafer(VGF Method), Dia:2’’, N-type, Si Dope, Orientation:(100)±2°, Thickness:350±25μm, 2-Side P
SEAPIDStare
DA36146412
Data17 Iulie 2024
Valoare2.848,56 RON
Oferta acceptata
Autoritatea contractantaLocalitateMagurele, Ilfov
FurnizorTipul contractuluiFurnizare
Cod CPVDescriere:conform descriere (ref 1061)
Achizitii2.848,56 RON
Cantitate: 1
Unitate masura: 5 buc/set
GaAs Wafer(VGF Method), Dia:2’’, N-type, Si Dope, Orientation:(100)±2°, Thickness:350±25μm, 2-Side P
GaAs Wafer(VGF Method), Dia:2’’, N-type, Si Dope, Orientation:(100)±2°, Thickness:350±25μm, 2-Side Polished, Epi Ready