IDDA33773157
Data03 August 2023
ValoareStareOferta acceptata
Autoritatea contractantaLocalitateBucuresti, Bucuresti
FurnizorTipul contractuluiFurnizare
Cod CPVDescriere:NAND Flash Memory Samsung V-NAND 3bit MLC DRAM Cache Memory 512MB LPDDR4 1GB LPDDR4 2GB LPDDR4 4GB LPDDR4 Dimensions 100x 69.85x 6.8(mm) Form Factor 2.5 inch Performance (Up to.)2) Sequential Read 560 MB/s Sequential Write3) 530 MB/s 4KB Ran. Read (QD1) 13,000 IOPS 4KB Ran. Write (QD1) 36,000 IOPS 4KB Ran. Read (QD32) 98,000 IOPS 4KB Ran. Write (QD32) 88,000 IOPS Power Consumption Idle DIPM 30 mW Active (Avg.) Read/Write 2.0W/2.5W Devslp 3.0 mW Reliability4) Temp. Operating 0°C to 70°C Non-Operating -40°C to 85°C Humidity 5% to 95% non-condensing Shock Non-Operating 1,500G, duration: 0.5ms, 3 axis Vibration Non-Operating 20~2,000Hz, 20G MTBF 1.5 million hours
Achizitii361,34 RON
Cantitate: 3
Unitate masura: bucata
NAND Flash Memory Samsung V-NAND 3bit MLC
NAND Flash Memory Samsung V-NAND 3bit MLC
DRAM Cache Memory 512MB LPDDR4 1GB LPDDR4 2GB LPDDR4 4GB LPDDR4
Dimensions 100x 69.85x 6.8(mm)
Form Factor 2.5 inch
Performance
(Up to.)2)
Sequential Read 560 MB/s
Sequential Write3) 530 MB/s
4KB Ran. Read (QD1) 13,000 IOPS
4KB Ran. Write (QD1) 36,000 IOPS
4KB Ran. Read (QD32) 98,000 IOPS
4KB Ran. Write (QD32) 88,000 IOPS
Power Consumption Idle DIPM 30 mW
Active (Avg.) Read/Write 2.0W/2.5W
Devslp 3.0 mW
Reliability4)
Temp.
Operating 0°C to 70°C
Non-Operating -40°C to 85°C
Humidity 5% to 95% non-condensing
Shock Non-Operating 1,500G, duration: 0.5ms, 3 axis
Vibration Non-Operating 20~2,000Hz, 20G
MTBF 1.5 million hours