NAND Flash Memory Samsung V-NAND 3bit MLC

    SEAP
    ID
    DA33773157
    Data
    03 August 2023
    Valoare
    1.084,02 RON
    Stare
    Oferta acceptata
    Autoritatea contractanta
    27690298 - AUTORITATEA DE INVESTIGATII SI ANALIZA PENTRU SIGURANTA AVIATIEI CIVILE
    Localitate
    Bucuresti, Bucuresti
    Furnizor
    26469842 - S.C. RETENTION STRATEGIES S.R.L.
    Tipul contractului
    Furnizare
    Cod CPV
    39173000-5 - Unitati de stocare (Rev.2)
    Descriere:
    NAND Flash Memory Samsung V-NAND 3bit MLC DRAM Cache Memory 512MB LPDDR4 1GB LPDDR4 2GB LPDDR4 4GB LPDDR4 Dimensions 100x 69.85x 6.8(mm) Form Factor 2.5 inch Performance (Up to.)2) Sequential Read 560 MB/s Sequential Write3) 530 MB/s 4KB Ran. Read (QD1) 13,000 IOPS 4KB Ran. Write (QD1) 36,000 IOPS 4KB Ran. Read (QD32) 98,000 IOPS 4KB Ran. Write (QD32) 88,000 IOPS Power Consumption Idle DIPM 30 mW Active (Avg.) Read/Write 2.0W/2.5W Devslp 3.0 mW Reliability4) Temp. Operating 0°C to 70°C Non-Operating -40°C to 85°C Humidity 5% to 95% non-condensing Shock Non-Operating 1,500G, duration: 0.5ms, 3 axis Vibration Non-Operating 20~2,000Hz, 20G MTBF 1.5 million hours
    Achizitii
    361,34 RON
    Cantitate: 3
    Unitate masura: bucata
    NAND Flash Memory Samsung V-NAND 3bit MLC
    NAND Flash Memory Samsung V-NAND 3bit MLC DRAM Cache Memory 512MB LPDDR4 1GB LPDDR4 2GB LPDDR4 4GB LPDDR4 Dimensions 100x 69.85x 6.8(mm) Form Factor 2.5 inch Performance (Up to.)2) Sequential Read 560 MB/s Sequential Write3) 530 MB/s 4KB Ran. Read (QD1) 13,000 IOPS 4KB Ran. Write (QD1) 36,000 IOPS 4KB Ran. Read (QD32) 98,000 IOPS 4KB Ran. Write (QD32) 88,000 IOPS Power Consumption Idle DIPM 30 mW Active (Avg.) Read/Write 2.0W/2.5W Devslp 3.0 mW Reliability4) Temp. Operating 0°C to 70°C Non-Operating -40°C to 85°C Humidity 5% to 95% non-condensing Shock Non-Operating 1,500G, duration: 0.5ms, 3 axis Vibration Non-Operating 20~2,000Hz, 20G MTBF 1.5 million hours