SILICON WAFERS DIA. 76.2 MM, TYPE/DOPANT N/As, Orientation: <100>, RESISTIVITY < 0.005 OHMCM, Coating: 50 nm DRY thermal oxide on both wafer sides - 200 BUC; SILICON WAFERS DIA. 76.2 MM, TYPE/DOPANT N/As, Orientation: <100>, RESISTIVITY < 0.005 OHMCM, Coating: 100 nm DRY thermal oxide on both wafer sides - 50 BUC (Inv. 224 13963 )