Ge single crystal substrate Sb-doped N-type(100) 2" diax0.5mm 2sp R.0.01-0.1ohm.cm-1buc, Ge single crystal substrate Sb-doped N-type(100) 2" diax0.5mm 1sp R.0.01-0.1ohm.cm-1buc, Ge single crystal substrate P-type Ga-doped (100) with flat 2" diax0.5mm 1sp R.0.01-0.1ohm.cm-1buc, Ge single crystal substrate P-type Ga-doped (100) 2" diax0.5mm 2sp R.0.01-0.1ohm.cm-1buc, SrTiO3 single crystal substrate (100) 1sp 10x5x0.5mm-10buc; Nb SrTiO3 single crystal substrate (100) 1sp 10x5x0.5mm-10buc, SrTiO3 single crystal substrate Fe doped (0.01%)(100) 10x5x0.5mm 1sp-10buc, DyScO3(001) single crystal wafer 5x5x0.5mm 1sp-10buc; HfO2 target 4N 2"x6.0m, fine ground 1buc; LaAlO3 target 4N 2"x6.0m, fine ground 1buc; YSZ target 4N 2"x6.0m, fine ground 1buc;SiO2 target 4N 2"x6.0m, fine ground 1buc;