SILICON WAFERS dia 100mm, dopant: intrinsec; orientation : (100)Resistivity>10000 ohmcm, 525+/-25um, front surface polished, back surface: polished, flats: 1semi- 25buc, SILICON WAFERS dia 100mm, dopant: P/Boron; orientation : (100), Resistivity: 1-30 ohmcm, 525+/-25um, front surface polished, back etched: , flats: 2 semi- 50 buc